| Multicrystalline Silicon Ingots |
| |
| Conductivity Type |
Growth Method |
Dopant |
Resistivity
(Ω．cm) |
| P type |
Direct Melt Directional Solidification Method |
Boron |
0.5~3 |
Carbon Concentration
(atoms/cm3) |
Oxygen Concentration
(atoms/cm3) |
Lifetime
(μs) |
Specification mm) |
| ≦1X1018 |
≦2×1018 |
≧2 |
690x690x245
840x840x304 |
|
| |
| Multicrystalline Silicon Wafers |
| |
| Conductivity Type |
Resistivity
(Ω．cm) |
Carbon Concentration
(atoms/cm3) |
Oxygen Concentration
(atoms/cm3) |
Lifetime (μs) |
| P type |
0.5~3 |
≦1×1018 |
≦2×1018 |
≧2 |
| Wafer Specification (mm) |
Length of Diagonal Line (mm) |
Thickness (μm) |
TTV (μm) |
Bow (μm) |
| Φ8":156±0.5 |
Φ8":219±0.5 |
180±20 |
≦30 |
≦40 |
|
|
