Hong Kong Stock Code: 00757
Taiwan Depositary Recepits: 9157TT
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Business Overview
‧Quality Upgrading
    of Silicon Materials
 
‧Customized Silicon     Materials
  ‧Monocrystalline Silicon
    Ingots & Wafers
  ‧Multicrystalline Silicon
    Ingots & Wafers
‧Mono- and Multi-
    crystalline Photovoltaic
    Modules
‧Photovoltaic System
    Design and Installation
Production Facilities

‧Jinzhou

 Jinzhou Yangguang Energy

Jinzhou New Sun PV Application Co.,Ltd

‧Shanghai

 Shanghai JingJi EMC

‧Qinghai

 Solargiga Energy (Qinghai)

‧TURKEY

Sales Market

 

 
Monocrystalline Silicon Ingots
 
Ingot SPEC Growth
method
Dopant Resistivity
(Ω.cm)
Oxygen Concentration
(atoms/cm3)
Carbon
Concentration
(atoms/cm3)
P CZ Boron 0.5~3, 3~6 ≦1X1018 ≦5X1016
N CZ Phos 0.5~3, 0.6~3.5 ≦0.95X1018 ≦5X1016
Ingot SPEC Dislocation
(Etch Pit Density) (/cm2)
Lifetime
(μs)
Crystal Orientation
(Degree)
Diameter
(mm)
Ingot Length
(mm)
P ≦3000 ≧15 <100>±3 100.0~200.0 100~1300
N ≦3000 ≧100 <100>±3 100.0~200.0 100~1300
 
Monocrystalline Silicon Wafers
 
Growth method CZ Lifetime (μs)
(μs)
P:≧15
N:≧100
Type P / N Dislocation
(Etch Pit Density) (/cm2)
≦3000
Dopant Boron / Phos Length of a Side
(mm)
Φ6":125±0.5
Φ6.5":125±0.5
Φ8":156±0.5
Crystal Orientation
(Degree)
<100>±3 Length of Diagonal Line
(mm)
Φ6":150±0.5
153±0.5
Φ6.5":165±0.5
Φ8":200±0.5
Resistivity
(Ω.cm)
P: 0.5~3, 3~6
N: 0.5~3, 0.6~3.5
Thickness
(μm)
180±20
Oxygen Concentration
(atoms / cm3)
P:≦1X1018
N:≦0.95X1018
TTV
(μm)
≦30
Carbon Concentration
(atoms / cm3)
≦5X1016 Bow
(μs)
≦40