| Growth method |
CZ |
Lifetime (μs)
(μs) |
P:≧15
N:≧100 |
| Type |
P / N |
Dislocation
(Etch Pit Density) (/cm2) |
≦3000 |
| Dopant |
Boron / Phos |
Length of a Side
(mm) |
Φ6":125±0.5
Φ6.5":125±0.5
Φ8":156±0.5 |
Crystal Orientation
(Degree) |
<100>±3 |
Length of Diagonal Line
(mm) |
Φ6":150±0.5
153±0.5
Φ6.5":165±0.5
Φ8":200±0.5 |
Resistivity
(Ω．cm) |
P: 0.5~3, 3~6
N: 0.5~3, 0.6~3.5 |
Thickness
(μm) |
180±20 |
Oxygen Concentration
(atoms / cm3) |
P:≦1X1018
N:≦0.95X1018 |
TTV
(μm) |
≦30 |
Carbon Concentration
(atoms / cm3) |
≦5X1016 |
Bow
(μs) |
≦40 |
